| PART |
Description |
Maker |
| 2SD2098 |
NPN Silicon Epitaxial Planar Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
| BUV22_D ON0258 BUV22 |
SITCHMODE Series NPN Silicon Power Transistor
From old datasheet system
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS
|
ON Semiconductor
Motorola, Inc
|
| BUV23 |
30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS 30 A, 325 V, NPN, Si, POWER TRANSISTOR, TO-204AE
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| SDT96305 |
NPN SILICON POWER TRANSISTOR 50 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
TT electronics Semelab, Ltd.
Seme LAB
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| MJ10023 MJ10022 |
40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| BFG591 BFG591/T1 |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
NPN 7 GHz wideband transistor
|
Philips
|
| D44T8 D44T2 D44T3 D44T1 D44T4 D44T5 D44T6 D44T7 |
POWER TRANSISTORS(2.0A,250-300V,31W) 功率晶体管（2.0安培,250 - 300V1宽）
|
Mospec Semiconductor, Corp.
|
| MJ21196 MJ21195 ON1990 |
From old datasheet system
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor]
|
| MMFT107T1D MMFT107T3 MMFT107T1 MMFT107 MMFT107T1-D |
Power MOSFET 250 mA, 200 Volts N-Channel SOT-223
Power MOSFET 250 mA / 200 Volts
Power MOSFET 250 mA, 200 Volts 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
|
ONSEMI[ON Semiconductor]
|
| BCX56 BCX56135 |
80 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
